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AOTF8N50L
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AOTF8N50L

Alpha & Omega Semiconductor Inc.
AOTF8N50L
MOSFET
TO-220-3 Full Pack
Active
AOTF8N50L
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AOTF8N50L Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C9A (Tj)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds1042 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)38.5W (Tc)
Qualification-
Rds On (Max) @ Id, Vgs850mOhm @ 4A, 10V
Series-
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA
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