Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EPC2016 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 50 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Package / Case | Die | |
| Power Dissipation (Max) | - | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V | |
| Series | eGaN® | |
| Supplier Device Package | Die | |
| Technology | GaNFET (Gallium Nitride) | |
| Vgs (Max) | +6V, -5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Request Quote
Minimum: 1
Availability: RFQ
Quote: Request
This item is quoted based on live sourcing conditions. Please contact us for current price, stock, date code, MOQ, and lead time support@aoxiic.com.
Quick Inquiry
Copyright © 2020-2026, AoXi Technology Co., Limited All Rights Reserved.
