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EPC2021ENGR
EPC
EPC2021ENGR
TRANS GAN 80V 60A BUMPED DIE
Die
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EPC2021ENGR Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 40 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Package / Case | Die | |
| Power Dissipation (Max) | - | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 29A, 5V | |
| Series | eGaN® | |
| Supplier Device Package | Die | |
| Technology | GaNFET (Gallium Nitride) | |
| Vgs (Max) | +6V, -4V | |
| Vgs(th) (Max) @ Id | 2.5V @ 14mA |
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