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GPI65010DF56
GaNPower
GPI65010DF56
GANFET N-CH 650V 10A DFN 5X6
Die
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GPI65010DF56 Attributes (17)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 6 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 400 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | Die | |
| Power Dissipation (Max) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Series | - | |
| Supplier Device Package | Die | |
| Technology | GaNFET (Gallium Nitride) | |
| Vgs (Max) | +7.5V, -12V | |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
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Unit Price: $2.45
Total Price: $2.45
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