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GE12160CEA3
GE Aerospace
GE12160CEA3
1200V 1425A SiC Half-Bridge
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GE12160CEA3 Attributes (16)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| FET Feature | Silicon Carbide (SiC) | |
| FET Type | 2 N-Channel (Half Bridge) | |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V | |
| Mfr | GE Aerospace | |
| Mounting Type | Chassis Mount | |
| Operating Temperature | 175°C (TJ) | |
| Package | Bulk | |
| Package / Case | Module | |
| Power - Max | 3.75kW (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V | |
| Series | Automotive, AEC-Q101 | |
| Supplier Device Package | - | |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
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Unit Price: $1583.19
Total Price: $1583.19
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