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RFD16N05LSM
Harris Corporation
RFD16N05LSM
N-CHANNEL POWER MOSFET
TO-252-3, DPak (2 Leads + Tab), SC-63
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RFD16N05LSM Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drain to Source Voltage (Vdss) | 50 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Power Dissipation (Max) | 60W (Tc) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 16A, 5V | |
| Series | - | |
| Supplier Device Package | TO-252AA | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±10V | |
| Vgs(th) (Max) @ Id | 2V @ 250mA |
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