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IV1D12020T3
Inventchip
IV1D12020T3
SIC DIODE, 1200V 20A(10A/LEG), T
TO-247-3
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IV1D12020T3 Attributes (13)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Average Rectified (Io) (per Diode) | 30A (DC) | |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Mounting Type | Through Hole | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Package / Case | TO-247-3 | |
| Reverse Recovery Time (trr) | 0 ns | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Supplier Device Package | TO-247-3 | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
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Unit Price: $8.62
Total Price: $8.62
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