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IXRFSM12N100
IXYS-RF
IXRFSM12N100
MOSFET N-CH 1000V 12A 16SMPD
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
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IXRFSM12N100 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Drain to Source Voltage (Vdss) | 1000 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 2875 pF @ 800 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Package / Case | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad | |
| Power Dissipation (Max) | 940W | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 15V | |
| Series | SMPD | |
| Supplier Device Package | 16-SMPD | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±20V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
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