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IXRFSM18N50
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IXRFSM18N50

IXYS-RF
IXRFSM18N50
MOSFET N-CH 500V 19A 16SMPD
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
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IXRFSM18N50
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IXRFSM18N50 Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 400 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Power Dissipation (Max)835W
Qualification-
Rds On (Max) @ Id, Vgs340mOhm @ 9.5A, 20V
SeriesSMPD
Supplier Device Package16-SMPD
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id6.5V @ 250µA
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