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SS275TA12205
IXYS-RF
SS275TA12205
DIODE ARR SIC SCHOT 1200V DE275
6-SMD, Flat Lead Exposed Pad
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SS275TA12205 Attributes (15)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Average Rectified (Io) (per Diode) | 5A | |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V | |
| Diode Configuration | 3 Common Anode | |
| Grade | - | |
| Mounting Type | Surface Mount | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Package / Case | 6-SMD, Flat Lead Exposed Pad | |
| Qualification | - | |
| Reverse Recovery Time (trr) | 0 ns | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Supplier Device Package | DE275 | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
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