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DCG20C1200HR
IXYS
DCG20C1200HR
DIODE SIC 1.2KV 12.5A ISO247
TO-247-3
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DCG20C1200HR Attributes (15)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Capacitance @ Vr, F | 755pF @ 0V, 1MHz | |
| Current - Average Rectified (Io) | 12.5A | |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V | |
| Grade | - | |
| Mounting Type | Through Hole | |
| Operating Temperature - Junction | -40°C ~ 150°C | |
| Package / Case | TO-247-3 | |
| Qualification | - | |
| Reverse Recovery Time (trr) | - | |
| Series | - | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Supplier Device Package | ISO247 | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
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