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QH12TZ600Q
Power Integrations
QH12TZ600Q
DIODE SIL CARB 600V 12A TO220AC
TO-220-2
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QH12TZ600Q Attributes (13)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Capacitance @ Vr, F | 34pF @ 10V, 1MHz | |
| Current - Average Rectified (Io) | 12A | |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V | |
| Mounting Type | Through Hole | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Package / Case | TO-220-2 | |
| Reverse Recovery Time (trr) | 11.6 ns | |
| Series | Automotive, AEC-Q101, Qspeed™ | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Supplier Device Package | TO-220AC | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Voltage - Forward (Vf) (Max) @ If | 3.1 V @ 12 A |
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