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K6F4016R4E-EF85T00
Samsung Semiconductor, Inc.
K6F4016R4E-EF85T00
SRAM ASYNC SLOW 4M 256Kx16 1.8V
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K6F4016R4E-EF85T00 Attributes (16)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Access Time | - | |
| Clock Frequency | - | |
| DigiKey Programmable | Not Verified | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Memory Organization | 256K x 16 | |
| Memory Size | 4Mbit | |
| Memory Type | Volatile | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Package / Case | - | |
| Series | - | |
| Supplier Device Package | 48-TFBGA (6x7) | |
| Technology | SRAM - Asynchronous | |
| Voltage - Supply | 1.65V ~ 2.2V | |
| Write Cycle Time - Word, Page | 85ns |
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Unit Price: $1.23
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