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SQ2310CES-T1_GE3
Vishay Siliconix
SQ2310CES-T1_GE3
MOSFET N-CH 20V 6A TO236
TO-236-3, SC-59, SOT-23-3
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SQ2310CES-T1_GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V | |
| Grade | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 10 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power Dissipation (Max) | 2W (Tc) | |
| Qualification | - | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 4.5V | |
| Series | Automotive, AEC-Q101, TrenchFET® | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±8V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
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