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SQ7414AENW-T1_GE3
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SQ7414AENW-T1_GE3

Vishay Siliconix
SQ7414AENW-T1_GE3
MOSFET N-CH 60V 18A PPAK1212-8
PowerPAK® 1212-8
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SQ7414AENW-T1_GE3 Attributes (19)
TYPEDESCRIPTIONSELECT
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Grade-
Input Capacitance (Ciss) (Max) @ Vds1590 pF @ 30 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Package / CasePowerPAK® 1212-8
Power Dissipation (Max)62W (Tc)
Qualification-
Rds On (Max) @ Id, Vgs23mOhm @ 8.7A, 10V
Series-
Supplier Device PackagePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA
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