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SQS401ENW-T1_GE3
Vishay Siliconix
SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8
PowerPAK® 1212-8W
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SQS401ENW-T1_GE3 Attributes (19)
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| FET Feature | - | |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 21.2 nC @ 4.5 V | |
| Grade | Automotive | |
| Input Capacitance (Ciss) (Max) @ Vds | 1875 pF @ 20 V | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Package / Case | PowerPAK® 1212-8W | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Qualification | AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 12A, 10V | |
| Series | TrenchFET® | |
| Supplier Device Package | PowerPAK® 1212-8W | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±20V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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